IPDQ65R080CFD7XTMA1

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Description: N-CH 700V 107A 80mOhm HDSOP-22 Hersteller: INFINEON Matchcode: IPDQ65R080CFD7 Rutronik No.: TMOS7018 VPE: 750 MOQ: 750 Package: HDSOP-22 Verpackung: REEL

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Parameter

Configuration: N-CH
V(DS): 700 V
I(D)at Tc=25°C: 107 A
RDS(on)at 10V: 80 mOhm
Q(g): 50 nC
P(tot): 223 W
R(thJC): 0,56 K/W
Logic level: No
Mounting: SMD
Automotive: NO
Gehäuse: HDSOP-22
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP005537603
Zolltarifnummer: 85412900000
Land: Malaysia
Lieferzeit beim Hersteller: 22 Wochen

Beschreibung

Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

Summary of Features