IPD80R2K0P7ATMA1

Abbildung kann vom Original abweichen

Description: N-CH 800V 3A 1700mOhm TO252 Hersteller: INFINEON Matchcode: IPD80R2K0P7 Rutronik No.: TMOS2598 VPE: 2500 MOQ: 2500 Package: DPAK Verpackung: REEL

Alternativen finden

Datenblatt Einfügen in Projektliste Muster

Download the free Library Loader to convert this file for your ECAD Tool

Parameter

Configuration: N-CH
V(DS): 800 V
I(D)at Tc=25°C: 3 A
RDS(on)at 10V: 1700 mOhm
Q(g): 9 nC
P(tot): 24 W
R(thJC): 5.1 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOS P7
Fast bodydiode: NO
Automotive: NO
Gehäuse: DPAK
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP001634906
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: B
Lieferzeit beim Hersteller: 19 Wochen

Beschreibung

Description:

Summary of Features

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio

Benefits

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs