IPB017N10N5ATMA1

Abbildung kann vom Original abweichen

Description: N-CH 100V 180A 1,7mOhm TO263-7 Hersteller: INFINEON Matchcode: IPB017N10N5 Rutronik No.: TMOS1369 VPE: 1000 MOQ: 1000 Package: TO-263-7 Verpackung: REEL

Alternativen finden

Datenblatt Einfügen in Projektliste Muster

Download the free Library Loader to convert this file for your ECAD Tool

Parameter

Configuration: N-CH
V(DS): 100 V
I(D)at Tc=25°C: 180 A
RDS(on)at 10V: 1.7 mOhm
Q(g): 168 nC
P(tot): 375 W
R(thJC): 0.4 K/W
Logic level: NO
Mounting: SMD
Technology: OptiMOS
Fast bodydiode: NO
Automotive: NO
Gehäuse: TO-263-7
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP001227028
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 20 Wochen

Beschreibung

OptiMOS™ 5 100V power MOSFET IPB017N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.