IMW120R140M1HXKSA1

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Description: N-CH 1200V 19A 140mOhm TO247-3 Hersteller: INFINEON Matchcode: IMW120R140M1H Rutronik No.: TMOS2945 VPE: 30 MOQ: 30 Package: TO-247 Verpackung: TUBE

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Parameter

Configuration: N-CH
V(DS): 1200 V
I(D)at Tc=25°C: 19 A
RDS(on)at 10V: 140 mOhm
Q(g): 13 nC
P(tot): 94 W
R(thJC): 1.2 K/W
Logic level: NO
Mounting: THT
Technology: SiC
Fast bodydiode: YES
Automotive: NO
Gehäuse: TO-247
RoHS Status: RoHS-conform
Verpackung: TUBE

Hersteller Artikel: SP001946184
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 14 Wochen

Beschreibung

CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package
The CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

Summary of Features
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4 V
- 0V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses

Benefits
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity

Potential Applications
- Solutions for solar energy systems
- EV-Charging
- Uninterruptible power supply (UPS)
- Power Supplies
- Motor Control and Drives