IHW30N65R6
![INFINEON INFINEON](https://www.rutronik24.de/images/logos/infineon_medium.png)
![INFINEON SP005399486](https://www.rutronik24.com/pim/direct/infineon/medium/infineon-ihw30n65r6.jpg)
Abbildung kann vom Original abweichen
![](/assets/default/images/icons/pdf.png)
Download the free Library Loader to convert this file for your ECAD Tool
- V(CE)
- 650 V
- I(C)
- 65 A
- V(CEsat)
- 1,26 V
- Gehäuse
- TO247-3
- Bodydiode
- YES
- P(tot)
- 163 W
- Automotive
- NO
- t(r)
- 11 nS
- td(off)
- 161 nS
- td(on)
- 13 nS
- Befestigung
- THT
- RoHS Status
- RoHS-conform
- Technologie
- RC-Soft-Sw
- Verpackung
- TUBE
- Hersteller Artikel
- SP005399486
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- ABC-Schlüssel
- B
- Lieferzeit beim Hersteller
- 21 Wochen
650 V, 30 A IGBT with monolithically integrated diode in TO-247 package
Reverse Conducting R6 650 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.
Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.
Summary of Features
- Very low VCEsat and low Eoff
- High ruggedness and stable temperature behavior
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Frequency range 20-75 kHz
- Low EMI
- Very tight parameter distribution
- Maximum operating TJ of 175 °C
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor R5 portfolio
- High device reliability
- Good EMI behaviour
Die Artikel im Warenkorb können Sie verbindlich bestellen, oder - falls Sie weitere Fragen haben - als unverbindliche Anfrage an uns schicken.
Der Rutronik24 Shop ist nur für Firmenkunden. Ein Verkauf an Privatkunden ist nicht möglich.