IDD08SG60CXTMA2
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Description:
S-Diode 600V 8A 2.2V PG-TO252-3
Hersteller:
INFINEON
Matchcode:
IDD08SG60C
Rutronik No.:
DSKY5195
VPE:
2500
MOQ:
2500
Package:
DPAK
Verpackung:
REEL
Alternativen finden
Datenblatt
Einfügen in Projektliste
Muster
Datenblatt
Einfügen in Projektliste
Muster
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- V(RRM)
- 600 V
- I(F)per diode
- 8 A
- I(FSM)
- 35 A
- V(F)
- 2.2 V
- Technology
- 3thinQ!SiC
- Automotive
- NO
- Gehäuse
- DPAK
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Configuration
- SINGLE
- Mounting
- SMT
- T(j) max
- 175 °C
- Hersteller Artikel
- SP001632510
- ECCN
- EAR99
- Zolltarifnummer
- 85411000000
- Land
- Malaysia
- ABC-Schlüssel
- A
- Lieferzeit beim Hersteller
- 19 Wochen
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.
Summary of Features
- Benchmark switching behavior
- No reverse recovery charge
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
Benefits
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Target Applications
- Server
- Telecom
- Solar
- Lighting
- PC power
- AC-DC
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