2ED2103S06FXUMA1
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Datenblatt
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Muster
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- Kanäle
- 2
- I(lim,min)/Ch
- 0.7 A
- Befestigung
- SMD
- Diagnostik
- YES
- T(j,max)
- 150 °C
- I(lim,max)/Ch
- 0.29 A
- V(in,min)
- 10 V
- V(in,max)
- 20 V
- t(on)
- 0.09 µS
- t(off)
- 0.09 µS
- Technologie
- LEVELSHIFT
- OL Detection
- NO
- Automotive
- NO
- Gehäuse
- DSO-8
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP001896442
- ECCN
- EAR99
- Zolltarifnummer
- 85423990000
- Land
- Malaysia
- Lieferzeit beim Hersteller
- 41 Wochen
650 V half-bridge gate driver with integrated bootstrap diode
650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.
Based on our SOI-technology, the 2ED2103S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) up to + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode
- 90 ns propagation delay
- Cross-conduction prevention logic
- Internal 520 ns dead time
- HIN, /LIN logic input
- Floating channel designed for bootstrap operation
- Independent under voltage lockout (UVLO) for both channels
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- Maximum supply voltage of 25 V
- 3.3 V, 5 V and 15 V input logic compatible
Benefits
- Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages on VS pin
Applications
- LED lighting system
- Power Management (SMPS) - Reference Design
- Robotics
- Servo motor
- Smart building
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