1EDS5663HXUMA1

GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs

The new single-channel galvanically isolated gate driver IC component 1EDS5663H is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Key advantages
Positive and negative gate drive currents:
- Fast turn-on / turn-off GaN switch slew-rates

Firmly holds gate voltage at zero, during off-phase:
- Avoids spurious GaN switch turn-on
- Up to 50% lower dead-time losses

Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle:
- Robust and energy efficient SMPS designs
- Short time-to-market

Integrated galvanic isolation:
- Robust operation in hard-switching applications
- Safe isolation where needed

Key features
Low ohmic outputs:
- Source: 0.85 Ω
- Sink: 0.35 Ω

Single-channel galvanic isolation:
- Reinforced: VIOTM = 8000Vpk (VDE 0884-10 pending)
              VIOWM = 1420 VDC
- CMTI min:   200V/ns

Timing:
- Minimum output pulse width: 18 ns
- Propagation delay accuracy: 13 ns

Key use cases
- Totem-pole PFCs
- Vienna rectifiers
- Multi-level topologies
- Resonant LLC
 
Applications
- Server power supply
- Datacom
- Telecom DC-DC
- Adapter power supply
- Charger power supply
- Wireless charging