DGD2103MS8-13
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- Applikation
- Driver
- Kanäle
- 2
- V(op,max)
- 600 V
- I(lim,min)/Ch
- 0.6 A
- Befestigung
- SMD
- T(j,max)
- 150 °C
- t(on)
- 0.68 µS
- t(off)
- 0.15 µS
- Technologie
- CMOS
- Automotive
- NO
- Gehäuse
- SO-8
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- ECCN
- EAR99
- Zolltarifnummer
- 85423990000
- Land
- China
- Lieferzeit beim Hersteller
- 10 Wochen
HALF-BRIDGE GATE DRIVER IN SO-8
The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation.
The DGD2103M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical).
The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.
- Motor Controls
- Floating High-Side Driver in Bootstrap Operation to 600V
- Drives Two N-channel MOSFETs or IGBTs in a Half-Bridge Configuration
- Designed for enhanced performance in noisy motor applications
- 290mA Source/600mA Sink Output Current Capability
- Outputs Tolerant to Negative Transients
- Internal Dead Time of 420ns to Protect MOSFETs
- Wide Low Side Gate Driver Supply Voltage: 10V to 20V
- Logic Input (HIN and LIN*) 3.3V Capability
- Schmitt Triggered Logic Inputs
- Undervoltage Lockout for VCC (Logic and Low Side Supply)
- Extended Temperature Range: -40°C to +125°C
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