IRFB4110PBF

Unsere Empfehlung

Abbildung kann vom Original abweichen

Description: N-CH 100V 180A 4,5mOhm TO220-3 Hersteller: INFINEON Matchcode: IRFB4110PBF Rutronik No.: TMOSP12115 VPE: 50 MOQ: 50 Package: TO-220 Verpackung: TUBE

Alternativen finden

Datenblatt Einfügen in Projektliste Muster

Download the free Library Loader to convert this file for your ECAD Tool

Parameter

Configuration: N-CH
V(DS): 100 V
I(D)at Tc=25°C: 180 A
RDS(on)at 10V: 4.5 mOhm
Q(g): 150 nC
P(tot): 370 W
R(thJC): 0.402 K/W
Logic level: NO
Mounting: THT
Technology: HEXFET
Fast bodydiode: NO
Automotive: NO
Gehäuse: TO-220
RoHS Status: RoHS-conform
Verpackung: TUBE

Hersteller Artikel: SP001570598
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 14 Wochen

Beschreibung

100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Summary of Features

Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available

Benefits

Standard pinout allows for drop in replacement
High-current carrying capability package
Industry standard qualification level
High performance in low frequency applications
Increased power density
Provides designers flexibility in selecting the most optimal device for their application

Potential Applications