IPN80R2K4P7ATMA1

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Description: N-CH 800V 2,5A 2000mOhm SOT223 Hersteller: INFINEON Matchcode: IPN80R2K4P7 Rutronik No.: TMOS2566 VPE: 3000 MOQ: 3000 Package: SOT-223 Verpackung: REEL

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Parameter

Configuration: N-CH
V(DS): 800 V
I(D)at Tc=25°C: 2.5 A
RDS(on)at 10V: 2000 mOhm
Q(g): 8 nC
P(tot): 6.3 W
Logic level: NO
Mounting: SMD
Technology: CoolMOS P7
Fast bodydiode: NO
Automotive: NO
Gehäuse: SOT-223
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP001664994
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: B
Lieferzeit beim Hersteller: 19 Wochen

Beschreibung

Description:

Summary of Features

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio

Benefits

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs