IPD80R1K4CEATMA1
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Description:
N-CH 800V 3,9A 1400mOhm TO252-3
Hersteller:
INFINEON
Matchcode:
IPD80R1K4CE
Rutronik No.:
TMOSP11373
VPE:
2500
MOQ:
2500
Package:
DPAK
Verpackung:
REEL
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Datenblatt
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Datenblatt
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- Configuration
- N-CH
- V(DS)
- 800 V
- I(D)at Tc=25°C
- 3.9 A
- RDS(on)at 10V
- 1400 mOhm
- Q(g)
- 23 nC
- P(tot)
- 63 W
- R(thJC)
- 2 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOS CE
- Fast bodydiode
- NO
- Automotive
- NO
- Gehäuse
- DPAK
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP001130972
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- ABC-Schlüssel
- B
- Lieferzeit beim Hersteller
- 17 Wochen
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS™ family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation.
Summary of Features
- Low specific on-state resistance (R DS(on)*A)
- Very low energy storage in output capacitance (E oss) @ 400V
- Low gate charge (Q g)
- Field-proven CoolMOS™ quality
- CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits
- High efficiency and power density
- Outstanding price/performance
- High reliability
- Ease-of-use
Target Applications
- LED lighting
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