IKY75N120CH7XKSA1
Neues Produkt
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Description:
IGBT 1200V 75A 2.5V TO247
Hersteller:
INFINEON
Matchcode:
IKY75N120CH7
Rutronik No.:
IGBT3206
VPE:
30
MOQ:
240
Package:
TO247-3-46
Verpackung:
TUBE
Datenblatt
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Muster
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- V(CE)
- 1200 V
- I(C)
- 75 A
- V(CEsat)
- 1.7 V
- Gehäuse
- TO247-3-46
- P(tot)
- 549 W
- Automotive
- NO
- t(r)
- 14 nS
- td(off)
- 367 nS
- td(on)
- 42 nS
- RoHS Status
- RoHS-conform
- Verpackung
- TUBE
- Hersteller Artikel
- SP005578297
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- Lieferzeit beim Hersteller
- 21 Wochen
1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
Applications
Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, very soft and low Qrr
- Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
- Offering Tj(max) of 175 °C
Benefits
- Technology with the highest power density with up to 140 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
- Highest power density with heat dissipation capability of TO-247PLUS vs TO-247
- Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
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