IKW75N65SS5XKSA1

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Description: IGBT 650V 75A +SIC-DIODE TO-247 Hersteller: INFINEON Matchcode: IKW75N65SS5 Rutronik No.: IGBT2912 VPE: 30 MOQ: 240 Package: TO247-3 Verpackung: TUBE

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Parameter

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.35 V
Gehäuse: TO247-3
Bodydiode: YES
P(tot): 395 W
Automotive: NO
t(r): 13 nS
td(off): 145 nS
td(on): 22 nS
Befestigung: THT
RoHS Status: RoHS-conform
Technologie: IGBT5
Verpackung: TUBE

Hersteller Artikel: SP004038158
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 22 Wochen

Beschreibung

650 V, 75 A IGBT Discrete with CoolSiC™ diode

650 V, 75 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package.

The 650 V hard-switching TRENCHSTOP™ 5 S5 IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in.

Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC Schottky barrier diodes further reduces switching losses at almost unchanged dv/dt and di/dt values.

Summary of Features

Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 IGBT and CoolSiC™ diode technology
Very low on-state losses
Benchmark switching efficiency in hard switching topologies
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Benefits