IKW75N65EL5XKSA1

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Description: IGBT 650V 75A 1,1V TO247-3 Hersteller: INFINEON Matchcode: IKW75N65EL5 Rutronik No.: IGBT2016 VPE: 30 MOQ: 240 Package: TO247-3 Verpackung: TUBE

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Parameter

V(CE): 650 V
I(C): 75 A
V(CEsat): 1.1 V
Gehäuse: TO247-3
Bodydiode: YES
P(tot): 268 W
Automotive: NO
t(r): 50 nS
td(off): 275 nS
td(on): 40 nS
Befestigung: THT
RoHS Status: RoHS-conform
Technologie: fast
Verpackung: TUBE

Hersteller Artikel: SP001174464
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: China
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.

Summary of Features

Lowest saturation voltage V CE(sat) of only 1.05V
Low switching losses of 1.6mJ @ 25°C for 30A IGBT
High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package