IGB50N65S5ATMA1

Abbildung kann vom Original abweichen

Description: IGBT 650V 50A 1.35V TO263-3 Hersteller: INFINEON Matchcode: IGB50N65S5 Rutronik No.: IGBT2472 VPE: 1000 MOQ: 1000 Package: TO263-3 Verpackung: REEL

Alternativen finden

Datenblatt Einfügen in Projektliste Muster

Download the free Library Loader to convert this file for your ECAD Tool

Parameter

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.35 V
Gehäuse: TO263-3
Bodydiode: NO
P(tot): 270 W
Automotive: NO
t(r): 30 nS
td(off): 139 nS
td(on): 20 nS
Befestigung: SMD
RoHS Status: RoHS-conform
Technologie: TRENCHST.5
Verpackung: REEL

Hersteller Artikel: SP001502566
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

Description:

Summary of Features

Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
I C(n)=four times nominal current (100°C Tc)
Soft current fall characteristics with no tail current
Symmetrical, low voltage overshoot
Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
Maximum junction temperature Tvj=175°C
Qualified according to JEDEC standards