IGB50N65H5ATMA1

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Description: IGBT 650V 50A 1.65V TO263-3 Hersteller: INFINEON Matchcode: IGB50N65H5 Rutronik No.: IGBT2473 VPE: 1000 MOQ: 1000 Package: TO263-3 Verpackung: REEL

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Parameter

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.65 V
Gehäuse: TO263-3
Bodydiode: NO
P(tot): 270 W
Automotive: NO
t(r): 31 nS
td(off): 173 nS
td(on): 23 nS
Befestigung: SMD
RoHS Status: RoHS-conform
Technologie: TRENCHST.5
Verpackung: REEL

Hersteller Artikel: SP001509614
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: A
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

Description:

Summary of Features

650 V breakthrough voltage
Compared to Infineon’s High Speed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Infineon’s new Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsat
Temperature stability of Vf

Benefits

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design