IGB20N60H3ATMA1

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Description: IGBT 600V 40A 1.95V TO263-3 Hersteller: INFINEON Matchcode: IGB20N60H3 Rutronik No.: IGBT1235 VPE: 1000 MOQ: 1000 Package: TO263 Verpackung: REEL

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Parameter

V(CE): 600 V
I(C): 40 A
V(CEsat): 1.5 V
Gehäuse: TO263
Bodydiode: NO
P(tot): 170 W
Automotive: NO
t(r): 11 nS
td(off): 194 nS
td(on): 16 nS
Befestigung: SMD
RoHS Status: RoHS-conform
Technologie: 2-20kHz
Verpackung: REEL

Hersteller Artikel: SP000852232
ECCN: EAR99
Zolltarifnummer: 85412900000
Land: Malaysia
ABC-Schlüssel: B
Lieferzeit beim Hersteller: 21 Wochen

Beschreibung

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom