BFP650H6327XTSA1

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Description: NPN RF-Trans 4V 150mA SOT343 Hersteller: INFINEON Matchcode: BFP650 H6327 Rutronik No.: THF5328 VPE: 3000 MOQ: 3000 Package: SOT343 Verpackung: REEL

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Parameter

Polarität: NPN
U(cc) max: 4 V
Frequenz f: 50000 MHz
P(out): 0.5 W
Gehäuse: SOT343
Automotive: AEC-Q(101)
RoHS Status: RoHS-conform
Verpackung: REEL

Hersteller Artikel: SP000750406
ECCN: EAR99
Zolltarifnummer: 85412100000
Land: China
ABC-Schlüssel: B
Lieferzeit beim Hersteller: 10 Wochen

Beschreibung

High Linearity Low Noise SiGe:C NPN RF Transistor

Summary of Features:

Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
Based on Infineon´s reliable, high volume SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard package with visible leads
Qualification report according to AEC-Q101 available

Target Applications: