A4D08QA8BNTDME
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- Speicherkapazität
- 8GB
- Temp. Max
- 95°C
- Anordnung
- DIMM
- Temp. Min
- 0°C
- Takt(geber)frequenz
- 2666 MHZ
- ECC
- NO
- Spannung
- 1.2
- Pins
- 288
- registriert
- NO
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Verpackung
- TRAY
- ECCN
- EAR99
- Zolltarifnummer
- 84733020000
- Land
- Taiwan
- Lieferzeit beim Hersteller
- 6 Wochen
Rutronik Approved Compatibility (MemTest86)
Boards:
+ DISBOA2988 (Validated by Rutronik)
Please contact PM Richard Klauser for MemTest86 Pro Certificate.
ATP's fourth-generation industrial DDR memory combines up to 3200
MT/s data transfer rate and a mere 1.2V power consumption to deliver
faster performance at higher power savings over earlier DRAM
technologies.
As the evolutionary transition from DDR3, DDR4
supports features and functions that are well-suited for increasing
bandwidth capabilities to support the growth of online traffic.
DDR4-3200
MT/s is the newest generation of fast, performance-oriented DRAM
modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and
Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3
processors. The increased interface speed from 2400 MT/s to 3200 MT/s
amplifies theoretical peak performance by 20% and gives a boost to the
most critical computing applications in industries such as
telecommunication infrastructures, networking storage systems,
network-attached storage (NAS) servers, micro/cloud servers, and
embedded systems like industrial PCs.
Features:
- Density: 2 GB to 128 GB
- Increased performance and bandwidth (up to 3200 MT/s)
- Decreased voltage for better power consumption
- Provides better reliability, availability and serviceability (RAS) and improves data integrity
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